Extreme ultraviolet (EUV) lithography is the industry’s only viable single pass patterning technology for critical layers of the most advanced manufacturing nodes. Multiple customers are qualifying EUV for insertion into production in 2018/19.

We continue to lead light source development with the market introduction of the first Laser-Produced Plasma (LPP) Extreme Ultraviolet Lithography sources for ASML EUV lithography platforms. These leading-edge sources generate 13.5 nm light, with power stability required for today’s most advanced feature sizes.

Our portfolio of LPP Extreme Ultraviolet Lithography light sources includes the installed base for TWINSCAN NXE:3100 and NXE:3300B platforms and the next-generation source for the first EUV volume production platform, the TWINSCAN NXE:3350B.

An Extreme Ultraviolet Lithography light source has three primary components:

  1. High-power CO2 Drive Laser
  2. Source Plasma Vessel
  3. Beam Transport and Focusing System (BTS)

A high-energy laser (~30 kilowatts) is transmitted to the vessel through the BTS where it’s focused onto small droplets (~25 microns in diameter) of highly purified liquid tin expelled from the droplet generator (DG).

The tin droplets are expelled from the DG at high speed (~70 m/s) and frequency (50,000 Hz) then vaporized to create laser-produced-plasma (LPP).

EUV photons emitted from the plasma are collected by the mirror (designed with special coating to reflect 13.5nm wavelength light) and transmitted to the intermediate focus point where they enter the scanner and enable the patterning of very small (<10nm) features on a silicon wafer surface.