Where is Cymer?

Watch the video to find out..+

EUV Source

Leader in EUV Lithography Light Sources 

EUV Lithography is the front runner for next generation critical dimension imaging after 193 nm immersion lithography for layer patterning below the 22 nm node; beginning in 2013 according to the International Technology Roadmap for Semiconductors (ITRS). NAND Flash and DRAM devices are expected to be early adopters of the technology, with pilot line introduction starting in 2012. The availability of high power 13.5 nm sources has been categorized as high risk and ranked as critical with other technologies requiring significant developments to enable the realization of EUV lithography. High sensitivity photoresists with good line-edge-roughness (LER) and line-width-roughness (LWR) are needed to keep the required source power within reasonable limits. Photoresist sensitivity and overall optical transmission through the EUV scanner are the basis to derive EUV source power requirements within the usable bandwidth (BW) of 2 %. Scanner manufacturers are requiring clean EUV power of 250W at the intermediate focus (IF) to enable > 100 wph scanner throughput assuming a photoresist sensitivity of 15 mJ/cm2.



HVM I:  Cymer's EUV Source Making EUV Possible
 
HVM II 
Cymer's HVM I is the first generation EUV source, supplying the semiconductor industry with the first Laser-Produced Plasma light source for EUV Lithography. 
Features include:
  • Laser-Produced Plasma (LPP)
  • 13.5 nm wavelength
  • 105 watts (target)
  • <±0.2% dose stability (target)


HVM II:  Cymer's High Volume EUV Source

 HVM I  
The Cymer HVM II lightsource is planned for first deliveries to scanner manufacturers in the first half of 2012.
Features include:
    • Laser-Produced Plasma (LPP)
    • 13.5 nm wavelength
    • 250 watts (target)
    • <±0.2% dose stability (target)

 

 


Why EUV?

The shorter the wavelength, the more powerful the final integrated circuit—meaning smaller, faster, and more innovative electronic devices for mankind. Today’s current-generation DUV lithography has reached critical dimension limits. However, with EUV lithography, devices can be patterned from 32 nm to estimated single digit nm dimensions, keeping shrink progress, and Moore's Law, alive.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


 

Home :: About Us :: Careers :: Glossary :: Site Map Untitled Document
Google+FacebookTwitterLinkedInYouTube
ASML Home Page Legal Notices Privacy Policy © 2014 Cymer LLC
Cymer

USA Headquarters

17075 Thornmint Ct.
San Diego, CA 92127
t : 1 (858) 385-7300
f : 1 (858) 385-7100